Methods of fabricating ferroelectric capacitors having oxidation barrier conductive layers and lower electrodes disposed in trenches defined by supporting insulating layers

ABSTRACT

Ferroelectric capacitors are provided that include an integrated circuit substrate and a supporting insulation layer on the integrated circuit substrate having a face and a trench in the face. An oxidation barrier conductive layer is provided in the trench and a lower electrode is provided on the oxidation barrier conductive layer. A ferroelectric layer is provided on the lower electrode and an upper electrode is provided on the ferroelectric layer. Related methods of fabricating ferroelectric capacitors are also provided.

RELATED APPLICATIONS

This application is a divisional application of and claims priority tocopending U.S. patent application Ser. No. 10/650,879, filed Aug. 28,2003, which claims priority from Korean Patent Application No.2002-54908, filed Sep. 11, 2002, the disclosures of which are herebyincorporated herein by reference as if set forth in their entirety.

FIELD OF THE INVENTION

The present invention relates to integrated circuit devices and methodsof fabricating the same, and, more particularly, to ferroelectriccapacitors and methods of fabricating the same.

BACKGROUND OF THE INVENTION

Ferroelectric capacitors are used in integrated circuit memory deviceshas become more frequent due to their operation speed, low-power andlow-voltage operation, good tolerance and the like. Ferroelectric memorydevices can store data when power to the integrated circuit memorydevice is cut off, i.e. ferroelectric memory devices can be used asnon-volatile memory devices. A ferroelectric material provided betweenelectrodes of the ferroelectric memory device may provide thenon-volatile properties. The ferroelectric material typically has twopolarization states. The polarization state of the ferroelectricmaterial may be changed by applying an electric field and may beretained after the electrical field is no longer applied, i.e. theferroelectric memory device may store data when the power to the deviceis cut off.

Similar to the structure of conventional dynamic random access memories(DRAMs) capacitor, ferroelectric capacitors typically include aferroelectric material between two electrodes. DRAM capacitors storedata using a dielectric layer between two electrodes. In contrast,ferroelectric capacitors utilize the polarization property of aferroelectric material between the two electrodes to store data. Thus,ferroelectric capacitors may be formed using methods of fabricationdifferent from the methods of fabrication used for DRAMs because theferroelectric capacitor utilizes a new material, i.e., the ferroelectricmaterial, not used in the fabrication process of DRAMs. For example, ifpolysilicon is used as a material for one of the electrodes of theferroelectric capacitor, the ferroelectric material may react with thepolysilicon. Accordingly, a noble material such as platinum and/or aconductive material such as ruthenium dioxide may be used for theelectrodes of ferroelectric capacitors so that a reaction may not occur.

Furthermore, after forming the ferroelectric material, the ferroelectricmaterial may be treated using a thermal process having a hightemperature in an oxygen ambient to provide a ferroelectric crystallinestructure, i.e., a perovskite structure. During the thermal process, athin insulation layer, for example, silicon dioxide, may be formed at aninterface between a polysilicon contact plug and a lower electrode,which may cause the contact resistance to be degraded. Thus, anoxidation barrier conductive layer may be formed between the contactplug and the lower electrode in conventional devices to reduce thedegradation of the contact resistance.

Referring now to FIGS. 1A and 1B, cross-sections of conventionalferroelectric capacitors will be discussed. As illustrated in FIG. 1A,an insulation layer 10 is formed on an integrated circuit substrate (notshown). A polysilicon contact plug 12 is provided in the insulationlayer 10 so as to electrically connect an active region of theintegrated circuit substrate (not shown) to an oxidation barrierconductive layer 14. The oxidation barrier conductive layer 14 isprovided on the insulation layer 10 and the contact plug 12. A lowerelectrode layer 16 is provided on the oxidation barrier conductive layer14. A ferroelectric layer 18 is provided on the lower electrode and anupper electrode layer 20 is provided on the ferroelectric layer 18.

Referring now to FIG. 1B, the oxidation barrier conductive layer 14, thelower electrode layer 16, the ferroelectric layer 18 and the upperelectrode layer 20 are etched to form a capacitor 22. As illustrated inFIG. 1B, the ferroelectric capacitor 22 may have an inclined sidewallprofile, which may be caused by electrode layers that are not typicallyeasily etched and/or thick material layers. Accordingly, theferroelectric capacitor 22 may be unintentionally electrically connectedto an adjacent ferroelectric capacitor. This potential problem may beaddressed by increasing a distance between adjacent cells, however, thismay reduce the number of cells that may be integrated on a single chip.Furthermore, inclined sidewalls of the ferroelectric layer 18 maydecrease an area directly contacting the upper electrode, therebyreducing the contact resistance of the device.

Furthermore, to decrease the likelihood of having inclined sidewalls asillustrated in FIG. 1B, the thicknesses of the oxidation barrierconductive layer 14, the lower electrode layer 16, the ferroelectriclayer 18 and/or the upper electrode layer 20 may be decreased. However,decreasing the thickness of the oxidation barrier conductive layer 14may cause a surface of the contact plug 12 to be unintentionallyoxidized, thus, possibly increasing the contact resistance of thedevice. Furthermore, decreasing the thickness of the lower electrodelayer 16 may make it difficult to provide a ferroelectric materialhaving an acceptable crystalline property because the crystallineproperty of the ferroelectric material may depend on the lower electrodelayer 16. In addition, when the oxidation barrier conductive layer 14,the lower electrode layer 16, the ferroelectric layer 18 and the upperelectrode layer 20 are etched to form the capacitor 22, theferroelectric layer 18 may be over etched by the etchant such that theproperties of the ferroelectric material may be degraded. Furthermore,after the ferroelectric layer 18 is etched, the ferroelectric layer 18may be exposed to an etching ambient, for example, a plasma gas, whichmay also damage the ferroelectric material. It will be understood thatthe damage caused during the etch may occur even if the layers 20, 18,16, 14 are etched in separate steps. Accordingly, improved ferroelectriccapacitors and methods of fabricating ferroelectric capacitors may bedesired.

SUMMARY OF THE INVENTION

Embodiments of the present invention provide ferroelectric capacitorsincluding an integrated circuit substrate and a supporting insulationlayer on the integrated circuit substrate having a face and a trench inthe face. An oxidation barrier conductive layer is provided in thetrench and a lower electrode is provided on the oxidation barrierconductive layer. A ferroelectric layer is provided on the lowerelectrode and an upper electrode is provided on the ferroelectric layer.

In some embodiments of the present invention, the trench may include alower portion adjacent the integrated circuit substrate and an upperportion remote from the integrated circuit substrate. The oxidationbarrier conductive layer may be provided in the lower portion of thetrench and the lower electrode may be provided in the upper portion ofthe trench.

In further embodiments of the present invention, the capacitor mayfurther include an insulation layer on the integrated circuit substrate.The insulation layer may define a contact hole exposing at least aportion of an active region of the integrated circuit substrate. Acontact plug may be provided in the contact hole and the supportinginsulation layer may be on the insulation layer. The trench may expose asurface of the contact plug and at least a portion of the insulationlayer. The ferroelectric layer may be on the supporting insulation layerand the lower electrode.

In still further embodiments of the present invention, the capacitor mayfurther include an adhesion conductive layer between the oxidationbarrier conductive layer and a surface of the conductive plug, a surfaceof the insulating layer and sidewalls of supporting insulation layer.

In some embodiments of the present invention, the contact hole mayinclude an upper portion remote from the integrated circuit substrateand a lower portion adjacent the integrated circuit substrate. Thecontact plug may be provided in the lower portion of the contact holeand the oxidation barrier conductive layer may extend into the upperportion of the contact hole on the contact plug. An adhesion conductivelayer may be provided between the oxidation barrier conductive layer anda surface of the conductive plug, sidewalls of the contact hole, asurface of the insulating layer and sidewalls of supporting insulationlayer.

In further embodiments of the present invention, the supportinginsulation layer may include a first supporting insulation layer and thetrench in the face of the supporting insulting layer may include a firsttrench. In these embodiments of the present invention, the capacitor mayfurther include a second supporting insulation layer on the firstsupporting insulation layer. The seconding supporting insulation layermay have a face and a second trench in the face and the lower electrodemay be provided in the second trench.

In still further embodiments of the present invention, a distancebetween sidewalls of the second trench may be larger than a distancebetween sidewalls of the first trench such that the second trenchexposes a portion of a surface of the first supporting insulation layer.The lower electrode may be in the second trench on the oxidation barrierconductive layer and the surface of the first supporting insulationlayer.

In some embodiments of the present invention, the capacitor may furtherinclude an insulation layer on the integrated circuit substrate thatdefines a contact hole exposing at least a portion of an active regionof the integrated circuit substrate. A contact plug may be provided inthe contact hole and the first supporting insulation layer may beprovided on the insulation layer. The first trench may expose a surfaceof the contact plug and at least a portion of the insulation layeraround the contact plug. The ferroelectric layer may be on the secondsupporting insulation layer and the lower electrode.

In further embodiments of the present invention, the capacitor mayfurther include an adhesion conductive layer between the oxidationbarrier conductive layer and a surface of the conductive plug, a surfaceof the insulating layer and sidewalls of first supporting insulationlayer.

In still further embodiments of the present invention, the contact holemay include an upper portion remote from the integrated circuitsubstrate and a lower portion adjacent the integrated circuit substrate.The contact plug may be provided in the lower portion of the contacthole and the oxidation barrier conductive layer may extend into theupper portion of the contact hole on the contact plug. An adhesionconductive layer may be provided between the oxidation barrierconductive layer and a surface of the conductive plug, sidewalls of thecontact hole, a surface of the insulating layer and sidewalls of firstsupporting insulation layer.

In some embodiments of the present invention the ferroelectric layer mayextend across two adjacent cell array regions including at least oneferroelectric capacitor and the upper electrode may extend on theferroelectric layer and on first and second adjacent lower electrodes.The supporting insulation layer may include a first layer and a secondlayer on the first layer. The first layer may include nitride and thesecond layer may include oxide. In certain embodiments of the presentinvention, the capacitor may further include a hydrogen diffusion layeron an exposed portion of the ferroelectric layer and the upperelectrode. The oxidation barrier conductive layer may include Ir, TiAlN,TiN and/or Ru. Accordingly, embodiments of the present invention mayprovide improved ferroelectric capacitors and methods of fabricatingferroelectric capacitors.

While the present invention is described above primarily with referenceto ferroelectric capacitors, methods of fabricating ferroelectriccapacitors are also provided herein.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are cross-sectional views illustrating conventionalferroelectric capacitors.

FIG. 2 is a cross-sectional view illustrating ferroelectric capacitorsaccording to some embodiments of the present invention.

FIG. 3 is a cross-sectional view illustrating ferroelectric capacitorsaccording to further embodiments of the present invention.

FIG. 4 is a cross-sectional view illustrating ferroelectric capacitorsaccording to still further embodiments of the present invention.

FIG. 5 is a cross-sectional view illustrating ferroelectric capacitorsaccording to some embodiments of the present invention.

FIGS. 6A through 6I are cross-sectional views illustrating processingsteps in the fabrication of integrated circuit devices according toembodiments of the present invention illustrated in FIG. 2.

FIGS. 7A through 7F are cross-sectional views illustrating processingsteps in the fabrication of integrated circuit devices according toembodiments of the present invention illustrated in FIG. 3.

FIGS. 8A through 8G are cross-sectional views illustrating processingsteps in the fabrication of integrated circuit devices according toembodiments of the present invention illustrated in FIG. 4.

FIGS. 9A through 9G are cross-sectional views illustrating processingsteps in the fabrication of integrated circuit devices according toembodiments of the present invention illustrated in FIG. 5.

DETAILED DESCRIPTION

The present invention now will be described more fully hereinafter withreference to the accompanying drawings, in which preferred embodimentsof the invention are shown. This invention may, however, be embodied inmany different forms and should not be construed as limited to theembodiments set forth herein; rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. In thedrawings, the thickness of layers and regions are exaggerated forclarity. It will be understood that when an element such as a layer,region or substrate is referred to as being “on” another element, it canbe directly on the other element or intervening elements may also bepresent. It will be understood that when an element such as a layer,region or substrate is referred to as “under” or “beneath” anotherelement, it can be directly under the other element or interveningelements may also be present. It will be understood that when part of anelement is referred to as “outer,” it is closer to the outside of theintegrated circuit than other parts of the element. Like numbers referto like elements throughout.

Furthermore, relative terms, such as beneath, may be used herein todescribe an element's relationship to another as illustrated in theFigures. It will be understood that these terms are intended toencompass different orientations of the elements in addition to theorientation depicted in the Figures. For example, if a Figure isinverted, the elements described as “beneath” other elements would beoriented “above” these other elements. The relative terms are,therefore, intended to encompass all possible arrangements of theelements and not just the ones shown in the Figures.

It will be understood that although the terms first and second are usedherein to describe various regions, layers and/or sections, theseregions, layers and/or sections should not be limited by these terms.These terms are only used to distinguish one region, layer or sectionfrom another region, layer or section. Thus, a first region, layer orsection discussed below could be termed a second region, layer orsection, and similarly, a second region, layer or section may be termeda first region, layer or section without departing from the teachings ofthe present invention.

Embodiments of the present invention will be described below withrespect to FIGS. 2 through 9G. Embodiments of the present inventionprovide ferroelectric capacitors including a supporting insulation layerhaving a face and a trench in the face, an oxidation barrier conductivelayer in the trench and a lower electrode on the oxidation barrierconductive layer. In certain embodiments of the present invention thelower electrode is disposed in the trench in the face of the supportinginsulation layer. In further embodiments of the present invention, thelower electrode is disposed in a second trench in a face of a secondsupporting insulation layer on the first supporting insulation layer.Accordingly, ferroelectric capacitors according to embodiments of thepresent invention may provide improved device characteristics asdiscussed further below.

Referring now to FIG. 2, a cross-sectional view illustratingferroelectric capacitors according to some embodiments of the presentinvention will be discussed. As illustrated in FIG. 2, a ferroelectriccapacitor 340 includes an oxidation barrier conductive layer 260 a, alower electrode 280 a on the oxidation barrier conductive layer 260 a, aferroelectric layer 300 on the lower electrode 280 a and an upperelectrode 320 a on the ferroelectric layer 300. An insulation layer 120is provided on an integrated circuit substrate 100 having one or moreactive regions (not shown). The ferroelectric capacitor 340 is providedon the insulation layer 120 and is electrically connected to an activeregion (not shown) of the integrated circuit substrate 100 through acontact plug 180. The contact plug 180 is provided in a contact hole 140in a predetermined region of the insulation layer 120. The contact plugmay include a conductive material, for example, polysilicon, tungstenand the like. The contact hole 140 exposes at least a portion of theactive region (not shown) of the integrated circuit substrate 100.Insulation spacers 160 may also be provided on sidewalls of the contacthole 140 as illustrated in FIG. 2.

As further illustrated in FIG. 2, a trench 240 is provided in a face ofthe supporting insulation layer 230 on the insulation layer 120. Incertain embodiments of the present invention, the supporting insulationlayer 230 may include first and second layers. The first layer may be,for example, a nitride layer 200, and the second layer may be, forexample, an oxide layer 220. For example, the nitride layer 200 mayinclude a silicon nitride (SiN) layer and/or a silicon oxynitride (SiON)layer. The first layer may be provided on the insulation layer 120 andthe second layer may be provided on the first layer as illustrated inFIG. 2.

The trench 240 exposes a surface of the contact plug 180 and at least aportion of a surface of the insulation layer 120 around the contact plug180. In some embodiments of the present invention illustrated in FIG. 2,the oxidation barrier conductive layer 260 a is provided in a lowerportion of the trench 240 and the lower electrode 280 a is provided inan upper portion of the trench 240 on the oxidation barrier conductivelayer. The oxidation barrier conductive layer 260 a may include, forexample, Ir, TiN, TiAlN and/or Ru. In certain embodiments of the presentinvention, the lower electrode 280 a is provided on an entire surface ofthe oxidation barrier conductive layer 260 a. Thus, the oxidationbarrier conductive layer 260 a is electrically connected to the contactplug 180, which in turn electrically connects the oxidation barrierconductive layer 260 a to the integrated circuit substrate 100 throughthe contact plug 180. In certain embodiments of the present invention,the lower electrode 280 a may be provided on the oxidation barrierconductive layer 260 a such that a surface of the lower electrode 280 amay be substantially planar with a surface of the supporting insulationlayer 230. The trench 240, the oxidation barrier conductive layer 260 aand the lower electrode 280 a may be aligned in cell array regions ofthe integrated circuit substrate 100 and may be electrically insulatedfrom adjacent devices by the supporting insulation layer 230.

According to embodiments of the present invention, the thickness of, forexample, the oxidation barrier conductive layer 260 a and the lowerelectrode 280 a may be adjusted to a desired thickness withoutexperiencing the potential problems discussed above with respect toconventional ferroelectric capacitors. Accordingly, the thickness of theoxidation barrier conductive layer may be chosen to provide an improvedcontact resistance with a surface of the contact plug according toembodiments of the present invention. Furthermore, the thickness of thelower electrode may be chosen to provide improved materialcharacteristics of the ferroelectric layer.

Referring again to FIG. 2, the ferroelectric layer 300 is provided onthe supporting insulation layer 230 and the lower electrode 280 a. Incertain embodiments of the present invention, the ferroelectric layer300 may be provided on an entire cell array region, thus, possiblyincreasing an area directly contacting the upper electrode 320 a. Itwill be understood that that the ferroelectric layer 300 is provided onthe lower electrode 280 a and contacts the lower electrode 280 a, thelower electrode being provided between the oxidation barrier conductivelayer 260 a and the ferroelectric layer 300 such that the oxidationbarrier conductive layer 260 a is separated from the ferroelectric layer300.

An adhesion conductive layer 250 a may be provided between the oxidationbarrier conductive layer 260 a and the contact plug 180 as illustratedin FIG. 2. The adhesion conductive layer 250 a may include, for example,TiN, and/or Ti. The adhesion conductive layer 250 a is provided betweenthe oxidation barrier conductive layer 260 a and a surface of thecontact plug 180, a surface of the insulation layer 120 exposed by thetrench 240 and sidewalls of the trench 240. This adhesion conductivelayer 250 a may be provided to reinforce adhesion of the oxidationbarrier conductive layer 260 a.

The upper electrode 320 a is provided on the ferroelectric layer 300. Incertain embodiments of the present invention, the upper electrode 320 amay be provided on two adjacent trenches 240, i.e., two neighboringlower electrodes 260 a. In other words, a portion of the ferroelectriclayer 300 may be exposed between some trenches 240 of the integratedcircuit device as illustrated in FIG. 2. A hydrogen diffusion barrierlayer 360 may be provided on the upper electrode 320 a and the exposedportions of the ferroelectric layer 300 to protect the ferroelectriccapacitor 340.

Referring now to FIG. 3, a cross sectional view illustratingferroelectric capacitors according to further embodiments of the presentinvention will be discussed. The ferroelectric capacitor 340 illustratedin FIG. 3 includes many elements similar to those discussed above withrespect to FIG. 2. Thus, in the interest of brevity the details withrespect to the similar elements will not be repeated herein. Asillustrated in FIG. 3, the contact hole 140 includes a lower portion andan upper portion. The contact plug 180 a is provided in a lower portionof the contact hole 140, i.e., the contact plug 180 a is recessedbeneath the surface of the insulation layer 120. The oxidation barrierconductive layer 260 a is provided on the contact plug 180 a in theupper portion of the contact hole 140 on the recessed contact plug 180a. In other words, the oxidation barrier conductive layer 260 a extendsinto an upper portion of the contact hole 140. Accordingly, inembodiments of the present invention illustrated in FIG. 3, a distancebetween the contact plug 180 a and the lower electrode 280 a may beincreased.

Thus, the oxidation barrier conductive layer 260 a illustrated in FIG. 3is provided in an upper portion of the contact hole 140 and in a lowerportion of the trench 240 in the supporting insulation layer 230.Similar to FIG. 2, a lower electrode 280 a is provided in the upperportion of the trench 240. In addition, an adhesion conductive layer 250a is provided between the oxidation barrier conductive layer 260 a and asurface of the contact plug 180 a, sidewalls of the contact hole 140, asurface of the insulating layer 120 and sidewalls of the trench 140. Theferroelectric layer 300, the upper electrode 320 a and the hydrogendiffusion barrier layer 360 are provided in a way similar to thatdiscussed above with respect to the ferroelectric capacitor of FIG. 2and will not be discussed further herein.

Referring now to FIG. 4, a cross-sectional view illustrating aferroelectric capacitor according to still further embodiments of thepresent invention will be discussed. The details with respect to theintegrated circuit substrate 100, the insulation layer 120, the contactplug 180, the contact hole 140, the spacers 160, the adhesion conductivelayer 250 a, the ferroelectric layer 300, the upper electrode 320 a andthe hydrogen diffusion barrier layer 360 are similar to those discussedabove with respect to FIG. 2 and in the interest of brevity will not bediscussed further herein. As illustrated in FIG. 4, a first trench 235is provided in the face of a first supporting insulation layer 230 onthe insulation layer 120. The oxidation barrier conductive layer 260 ais provided in the first trench 235 in the first supporting insulationlayer 230. In certain embodiments of the present invention, a surface ofthe oxidation barrier conductive layer 260 a may be substantially planarwith a surface of the first supporting insulation layer. The firsttrench 235 exposes a surface of the contact plug 180 provided in thecontact hole 140 in the insulation layer 120 and at least a portion ofthe insulation layer 120 around the contact plug 180.

As further illustrated in FIG. 4, a second supporting insulation layer277 is provided on the first supporting insulation layer 230. The secondsupporting insulation layer has a face and a second trench 245 in theface. The lower electrode 280 a is provided in the second trench 245 inthe second supporting insulation layer 277 on the oxidation barrierconductive layer 260 a. The second trench 245 exposes a surface of theoxidation barrier conductive layer 260 a and at least a portion of thefirst supporting insulation layer 230 around to the oxidation barrierconductive layer 260 a. In other words, a distance between sidewalls ofthe second trench 245 is larger than a distance between sidewalls of thefirst trench 235 such that the second trench 245 exposes at least aportion of the surface of the first supporting insulation layer 230around the oxidation barrier conductive layer 260 a. Furthermore, thelower electrode 280 a is provided in the second trench 245 in the faceof the second supporting insulation layer 277 on the oxidation barrierconductive layer 260 a and the surface of the first supportinginsulation layer 230.

In certain embodiments of the present invention, the first and secondsupporting insulation layers 230 and 277 may include a first layer and asecond layer on the first layer. The first layer may include, forexample, a nitride layer 200, 270 and the second layer may include, forexample, an oxide layer 220, 275 on the nitride layer 200, 270. Anadhesion conductive layer 250 a, a ferroelectric layer 300, an upperelectrode 320 a and a hydrogen diffusion barrier layer 360 are providedin the same way as discussed above with respect to the ferroelectriccapacitor of FIG. 2 and will not be discussed further herein.

Referring now to FIG. 5, a cross-sectional view illustratingferroelectric capacitors according to some embodiments of the presentinvention will be discussed. The ferroelectric capacitor 340 illustratedin FIG. 5 includes many elements similar to those discussed above withrespect to FIG. 4. Thus, in the interest of brevity the details withrespect to the common elements will not be repeated herein. Asillustrated in FIG. 5, the contact hole 140 includes a lower portion andan upper portion. The contact plug 180 a is provided in the lowerportion of the contact hole 140, i.e., the contact plug 180 a isrecessed beneath the surface of the insulation layer 120. The oxidationbarrier conductive layer 260 a is provided on the contact plug 180 a inthe upper portion of the contact hole 140. In other words, the oxidationbarrier conductive layer 260 a extends into an upper portion of thecontact hole 140. Accordingly, in embodiments of the present inventionillustrated in FIG. 5, a distance between the contact plug 180 a and thelower electrode 280 a may be increased.

Thus, the oxidation barrier conductive layer 260 a illustrated in FIG. 5is provided in an upper portion of the contact hole 140 and in the firsttrench 235 in the first supporting insulation layer 230. Similar to FIG.4, a lower electrode 280 a is provided in the second trench 245. Inaddition, an adhesion conductive layer 250 a is provided between theoxidation barrier conductive layer 260 a and a surface of the contactplug 180 a, sidewalls of the contact hole 140, a surface of theinsulating layer 120 and sidewalls of the trench 140. The ferroelectriclayer 300, the upper electrode 320 a and the hydrogen diffusion barrierlayer 360 are provided in a way similar to that discussed above withrespect to the ferroelectric capacitor of FIG. 4 and will not bediscussed further herein.

It will be understood that although embodiments of the present inventionillustrated in FIGS. 2 through 5 include two ferroelectric capacitors340, embodiments of the present invention are not limited to thisconfiguration. For example, embodiments of the present invention mayinclude a single ferroelectric capacitor or more than two ferroelectriccapacitors without departing from the teachings of the presentinvention.

Methods of fabricating ferroelectric capacitors according to embodimentsof the present invention will now be discussed with respect to FIGS. 6Athrough 9G. Referring now to FIGS. 6A through 6I, processing steps inthe fabrication of ferroelectric capacitors according to embodiments ofthe present invention illustrated in FIG. 2 will be discussed. Referringnow to FIG. 6A, a conventional isolation process is performed to definean active region (not shown) and a device isolation region in theintegrated circuit substrate 100. A gate electrode and a bit line (notshown) are formed using a conventional method and an insulation layer120 is formed on the integrated circuit substrate 100. The insulationlayer 120 is patterned to form a contact hole 140 exposing the activeregion (not shown) of the integrated circuit substrate 100. The activeregion (not shown) may provide a source region formed in the integratedcircuit substrate 100 outside the gate electrode. The bit line may beelectrically connected to a drain region formed in the integratedcircuit substrate 100 outside of the gate electrode and opposite thesource region. The insulation layer 120 may include, for example, anoxide. The insulation layer 120 may further include first and secondlayers. The first layer may include, for example, an oxide, and thesecond layer may include, for example, a nitride.

Referring now to FIG. 6B, a plug conductive material is formed on theinsulation layer 120 in the contact hole 140. The plug conductivematerial is planarized to form a contact plug 180 in the contact hole140. The contact plug 180 may include, for example, polysilicon,tungsten and the like. Optional insulation spacers 160 may be formed onsidewalls of the contact hole 140 prior to forming the plug conductivematerial on the insulation layer 120.

A supporting insulation layer 230 is formed on the contact plug 180 andthe insulation layer 120. The supporting insulation layer 230 mayinclude a first layer 200 of, for example, nitride, and a second layer220 of, for example, oxide. The first layer 200 may be formed on theinsulation layer 120 and the contact plug 180 and the second layer 220may be formed on the first layer 200.

Referring now to FIG. 6C, the supporting insulation layer 230 ispatterned to form a trench 240 exposing a surface of the contact plug180 and at least a portion of a surface of the insulation layer 120around the contact plug 180. In particular, the second layer 220, forexample, an oxide layer, may be etched using the first layer 200, forexample, a nitride layer, as an etch stop layer. The first layer 200 maythen be etched to expose a surface of the contact plug and at least aportion of the insulation layer 120 around the contact plug 180.

Referring now to FIG. 6D, an adhesion conductive material 250 can beformed uniformly along a shape of the trench 240, i.e., on a bottom andsidewalls of the trench 240. The adhesion conductive material 250 mayinclude, for example, TiN and/or Ti. An oxidation barrier conductivematerial 260 is formed on the adhesion conductive material 250. Theoxidation barrier conductive material 260 may include, for example, Ir,TiN, TiAlN and/or Ru. It will be understood that the oxidation barrierconductive material may be formed on the insulation layer and theadhesion conductive material may be omitted without departing from theteachings of the present invention. The adhesion conductive material 250may improve adhesion properties of the oxidation barrier conductivematerial 260 and an underlying layer, i.e., the surface of theinsulation layer 120 and the surface of the contact plug 180.

Referring now to FIG. 6E, a planarization process is performed on theoxidation barrier conductive material 260 until at least a portion of asurface of the supporting insulation layer 230 is exposed. Theplanarization process may include, for example, a chemical mechanicalpolishing (CMP) and/or an etch back process.

Referring to FIG. 6F, the oxidation conductive material 260 and theadhesion conductive material 250 are etched back to form an oxidationbarrier conductive layer 260 a and an adhesion conducive layer 250 a ina lower portion of the trench 240. The portion of the oxidation barrierconductive material 260 removed during the etch back process may bedetermined based on the desired thickness of the oxidation barrierconductive layer 260 a. In other words, the oxidation barrier conductivematerial 260 may be etched back until the oxidation barrier conductivelayer 260 a reaches a desired thickness.

Referring now to FIG. 6G, a lower electrode 280 a is formed in the upperportion of the trench 240. In particular, a lower electrode material isformed on the supporting insulation layer 230 and in the trench 240 anda planarization process is performed until the a portion of the surfaceof the supporting insulation layer 230 is exposed. The planarizationprocess may be, for example, a CMP process and/or an etch back process.The planarization process may be adjusted to achieve a lower electrode280 a having a desired thickness. In certain embodiments of the presentinvention, a surface of the lower electrode 280 a may be substantiallyplanar with the surface of the supporting insulation layer 230. Thelower electrode material may include, for example, a noble metal and/ora conductive oxide. The noble metal may include, for example, platinum(Pt), iridium (Ir), and/or ruthenium (Ru) and the conductive oxide mayinclude, for example, iridium dioxide (IrO2) and/or ruthenium dioxide(RuO2).

Referring now to FIG. 6H, a ferroelectric material 300 is formed on thesurface of the supporting insulation layer 230 and the lower electrode280 a. An upper electrode material 320 is formed on the surface of theferroelectric material 300. The ferroelectric layer 300 may be formedusing, for example, a sol-gel process, a physical vapor deposition (PVD)process and/or a chemical mechanical deposition (CVD) process. The upperelectrode material may be formed of, for example, a noble metal and/orconductive oxide. The lower electrode 280 a may cover the surface of theoxidation barrier conductive layer 260 a such that the ferroelectriclayer 300 may be formed on the lower electrode 280 a and the supportinginsulation layer 230 having good characteristics and morphology. Incertain embodiments of the present invention, PbTiO3 and TiO2 (notshown) may be formed as a seeding layer prior to forming theferroelectric layer 300. The seeding layer may improve materialproperties of the ferroelectric layer 300.

Referring now to FIG. 6I, the upper electrode material 320 is patternedto form an upper electrode 320 a covering adjacent lower electrodes. Ahydrogen diffusion layer 360 is formed on the upper electrode 320 a andthe ferroelectric layer 300 exposed by the upper electrode 320 a. Thehydrogen diffusion layer 300 may be formed of, for example, TiO2 and/orAl2O3. The hydrogen diffusion layer 360 may reduce the likelihood thatthe ferroelectric layer 300 will degrade properties thereof insubsequent processes.

According to certain embodiments of the present invention, theferroelectric layer may be formed after patterning the lower electrodeand the oxidation barrier conductive layer. Therefore, the ferroelectriclayer may not be exposed to an oxygen ambient during an etch of thelower electrode and the oxidation barrier conductive layer. Moreover,the ferroelectric layer may not be divided into a unit cell, so that theferroelectric layer may not be damaged by the etchant.

Furthermore, the oxidation barrier conductive layer and the lowerelectrode may be formed without limiting process conditions based on theferroelectric layer because the oxidation barrier conductive layer andthe lower electrode may be patterned prior to forming the ferroelectriclayer material. In other words, the oxidation barrier conductive layercan be formed to have a thickness that may effectively protectoxidation. Moreover, a thermal process having a high temperature can beperformed so as to improve layer properties. Furthermore, an improvedferroelectric layer may be formed by adjusting a thickness of the lowerelectrode that essentially affects a crystallization of theferroelectric layer.

Referring now to FIGS. 7A through 7F, processing steps in thefabrication of ferroelectric capacitors according to embodiments of thepresent invention illustrated in FIG. 3 will be discussed. Referring nowto FIG. 7A, a gate electrode, a bit line, an insulation layer 120, acontact hole 140, a contact plug 180, sidewall spacers 160 and asupporting insulation layer 230 are formed using similar methods tothose discussed above with respect to FIGS. 6A-6C and in the interest ofbrevity will not be discussed further herein.

Referring now to FIG. 7B, a surface of the contact plug 180 exposed bythe trench 240 is further etched to form a contact plug 180 a that isrecessed beneath a surface of the insulation layer 120. Referring now toFIG. 7C, an adhesion conductive material 250 and an oxidation barrierconductive material 260 are sequentially formed in the upper portion ofthe contact hole 180 a and in the trench 240. The oxidation barrierconductive material 260 and the adhesion conductive material 250 areetched back to form an adhesion conductive layer 250 a and an oxidationbarrier conductive layer 260 a in an upper portion of the contact hole140 and the lower portion of the trench 240 as illustrated in FIG. 7D. Alower electrode 280 a is formed in the upper portion of the trench 240as illustrated in FIG. 7E. A ferroelectric layer 300, an upper electrode320 and a hydrogen diffusion barrier layer 360 are formed as illustratedin FIG. 7F as discussed above with respect to FIGS. 6H and 6I.

Referring now to FIGS. 8A through 8G, processing steps in thefabrication of ferroelectric capacitors according to embodiments of thepresent invention illustrated in FIG. 4 will be discussed. Referring toFIG. 8A, a gate line, a bit line, an insulation layer 120, a contacthole 140, sidewall spacers 160, a contact plug 180 and a firstsupporting insulation layer 230 are formed on a substrate 100 asdiscussed above with respect to FIGS. 6A and 6B. The first supportinginsulation layer 230 is formed by, for example, forming a nitride layer200 on the insulation layer 120 and an oxide layer 220 on the nitridelayer 200.

Referring now to FIG. 8B, the first supporting insulation layer 230 ispatterned to form a first trench 235 exposing a surface of the contactplug 180 and a portion of an adjacent insulation layer 120 around thecontact plug 180. Referring now to FIG. 8C, an oxidation barrierconductive layer 260 a is formed in the first trench 235. In particular,an oxidation barrier conductive material is formed on the firstsupporting insulation layer 230 and in the first trench 235. Theoxidation barrier conductive material is planarized to electricallyinsulate the adjoining trench. In certain embodiments of the presentinvention, the planarization process may be adjusted to form anoxidation barrier conductive layer 260 a having a desired thickness. Forexample, if a thickness of the first supporting insulation layer 230 issimilar to the thickness of the oxidation barrier conductive layer 260a, the planarization process may be interrupted when a surface of thefirst supporting insulation layer 230 is exposed. Furthermore, if athickness of the first supporting insulation layer 230 is thicker than athickness of the oxidation barrier conductive layer 260 a, a portion ofthe first supporting insulation layer 230 may be etched by theplanarization process so as to achieve a oxidation barrier conductivelayer of a desired thickness. An adhesion conductive layer 250 a may beformed on sidewalls and a bottom of the first trench 235 before formingthe oxidation barrier conductive layer 260 a.

Referring now to FIG. 8D, a second supporting insulation layer 277 maybe formed on the oxidation barrier conductive layer 260 a and the firstsupporting insulation layer 230. For example, the second supportinginsulation layer 277 may be formed by forming a nitride layer 270 on thefirst supporting insulation layer 230 and forming an oxide layer 275 onthe nitride layer 270.

Referring now to FIG. 8E, the second supporting insulation layer 277 ispatterned to form a second trench 245 exposing the oxidation barrierconductive layer 260 a. In certain embodiments of the present invention,the second trench 245 may further expose a portion of a first supportinginsulation layer 230 around the oxidation barrier conductive layer 260a.

Referring now to FIG. 8F, a lower electrode 280 a is formed in secondtrench 245. In certain embodiments, the lower electrode material isformed on the second supporting insulation layer 277 in the secondtrench 245 and a planarization process is performed to electricallyinsulate the adjoining trenches 245. The planarization process may beperformed based on the thicknesses of the second supporting insulationlayer 277 and the lower electrode. A ferroelectric layer 300, an upperelectrode 320 a and a hydrogen diffusion barrier layer 360 are formed asillustrated in FIG. 8G using similar methods as those discussed abovewith respect to FIGS. 6H and 6I.

Referring now to FIGS. 9A-9G, processing steps in the fabrication offerroelectric capacitors according to embodiments of the presentinvention illustrated in FIG. 5 will be discussed. Referring now to FIG.9A, a gate line, a bit line, an insulation layer 120, a contact hole140, sidewall spacers 160, a contact plug 180, a first supportinginsulation layer 230 and a first trench 235 are formed in similar tothose like named elements discussed above with respect to FIGS. 8A and8B and will not be discussed further herein.

Referring now to FIG. 9B, a selective etch back process is applied to acontact plug 180 exposed by the first trench 235. Accordingly, a surfaceof the contact plug 180 a is recessed from a surface of the insulationlayer 120. Referring now to FIG. 9C, an adhesion conductive layer 250 aand an oxidation barrier conductive layer 260 a are formed in the upperportion of the contact hole 140 and a first trench 235.

Referring now to FIG. 9D, a second supporting insulation layer 277 isformed on the first supporting insulation layer 230. The secondsupporting insulation layer 277 is patterned to form a second trench 245exposing a surface of the oxidation barrier conductive layer 260 a and aat least portion of the first supporting insulation layer 230 around theoxidation barrier conductive layer as illustrated in FIG. 9E. As furtherillustrated in FIG. 9F, a lower electrode 280 a is formed in the secondtrench 245. Referring now to FIG. 9G, a ferroelectric layer 300, anupper electrode 320 a and a hydrogen diffusion barrier layer 360 areformed using similar methods as those discussed above and will not bediscussed further herein.

As discussed briefly above, ferroelectric capacitors according toembodiments of the present invention include an oxidation barrierconductive layer and a lower electrode provided in a trench in asupporting insulation layer. The lower electrode is provided on asurface of the oxidation barrier conductive layer. An oxidation barrierconductive layer having a desired thickness may be provided havingimproved contact resistance properties between a contact plug and thelower electrode. Furthermore, a lower electrode having a desiredthickness and the oxidation barrier conductive layer according toembodiments of the present invention may provide improved properties ofthe ferroelectric layer formed on the lower electrode.

Furthermore, the ferroelectric layer according to embodiments of thepresent invention may not be patterned until after the lower electrodeand the oxidation barrier conductive layer are formed. Accordingly, theferroelectric layer may have improved material properties because theferroelectric layer may not be exposed at an oxygen ambient when thelower electrode and the oxidation barrier conductive layer are etched.Furthermore, processes for forming the oxidation barrier conductivelayer can be independently adjusted without limitation of a processcondition for forming the ferroelectric layer.

In the drawings and specification, there have been disclosed typicalpreferred embodiments of the invention and, although specific terms areemployed, they are used in a generic and descriptive sense only and notfor purposes of limitation, the scope of the invention being set forthin the following claims.

1. A method of forming a ferroelectric capacitor comprising: forming asupporting insulation layer having a face and a trench in the face on anintegrated circuit substrate; forming an oxidation barrier conductivelayer in the trench; forming a lower electrode on the oxidation barrierconductive layer; forming a ferroelectric layer on the lower electrode;and forming an upper electrode on the ferroelectric layer.
 2. The methodof claim 1 wherein forming the oxidation barrier conductive layercomprises forming the oxidation barrier conductive layer in a lowerportion of the trench adjacent the integrated circuit substrate andwherein forming the lower electrode comprises forming the lowerelectrode in an upper portion of the trench remote from the integratedcircuit substrate.
 3. The method of claim 1 wherein forming thesupporting layer is preceded by: forming the integrated circuitsubstrate; forming an insulation layer on the integrated circuitsubstrate that defines a contact hole exposing at least a portion of anactive region of the integrated circuit substrate; and forming a contactplug in the contact hole, wherein forming the supporting insulationlayer comprises forming the supporting insulation layer on theinsulation layer, wherein the trench exposes a surface of the contactplug and at least a portion of the insulation layer around the contactplug and wherein forming the ferroelectric layer comprises forming theferroelectric layer on the supporting insulation layer and the lowerelectrode.
 4. The method of claim 3 further comprising: forming anadhesion conductive layer between the oxidation barrier conductive layerand a surface of the conductive plug, a surface of the insulating layerand sidewalls of supporting insulation layer.
 5. The method of claim 3wherein forming the contact plug comprises forming the contact plug inthe lower portion of the contact hole adjacent the integrated circuitsubstrate and wherein forming the oxidation barrier conductive layercomprises forming the oxidation barrier conductive layer extending intothe upper portion of the contact hole remote from the integrated circuitsubstrate on the contact plug.
 6. The method of claim 5 furthercomprising: forming an adhesion conductive layer between the oxidationbarrier conductive layer and a surface of the conductive plug, sidewallsof the contact hole, a surface of the insulating layer and sidewalls ofsupporting insulation layer.
 7. The method of claim 1 wherein thesupporting insulation layer comprises a first supporting insulationlayer and wherein the trench in the face of the first supportinginsulation layer comprises a first trench, the method furthercomprising: forming a second supporting insulation layer on the firstsupporting insulation layer, the seconding supporting insulation layerhaving a face and a second trench in the face, wherein forming the lowerelectrode comprises forming the lower electrode in the second trench. 8.The method of claim 7 wherein a distance between sidewalls of the secondtrench is larger than a distance between sidewalls of the first trenchsuch that the second trench exposes a portion of a surface of the firstsupporting insulation layer and wherein forming the lower electrodecomprises forming the lower electrode in the second trench on theoxidation barrier conductive layer and the surface of the firstsupporting insulation layer.
 9. The method of claim 7 furthercomprising: forming the integrated circuit substrate; forming aninsulation layer on the integrated circuit substrate that defines acontact hole exposing at least a portion of an active region of theintegrated circuit substrate; and forming a contact plug in the contacthole, wherein the first supporting insulation layer is formed on theinsulation layer and wherein the first trench exposes a surface of thecontact plug and at least a portion of the insulation layer and whereinforming the ferroelectric layer comprises forming the ferroelectriclayer on the second supporting insulation layer and the lower electrode.10. The method of claim 9 further comprising: forming an adhesionconductive layer between the oxidation barrier conductive layer and asurface of the conductive plug, a surface of the insulating layer andsidewalls of first supporting insulation layer.
 11. The method of claim9 wherein forming the contact plug comprises forming the contact plug inthe lower portion of the contact hole and wherein forming the oxidationbarrier conductive layer comprises forming the oxidation barrierconductive layer such that it extends into the upper portion of thecontact hole on the contact plug.
 12. The method of claim 11 furthercomprising: forming an adhesion conductive layer between the oxidationbarrier conductive layer and a surface of the conductive plug, sidewallsof the contact hole, a surface of the insulating layer and sidewalls offirst supporting insulation layer.
 13. The method of claim 1 whereinforming the ferroelectric layer comprises forming the ferroelectriclayer on an entire cell array region including at least oneferroelectric capacitor and wherein forming the upper electrodecomprises forming the upper electrode such that it extends on theferroelectric layer and on first and second adjacent lower electrodes.14. The method of claim 1 further comprising forming a hydrogendiffusion layer on an exposed portion of the ferroelectric layer and theupper electrode.
 15. A method of fabricating a ferroelectric capacitorcomprising: forming an insulation layer having a contact hole exposingan active region of a substrate; forming a contact plug in the contacthole including a plug conductive material; forming a supportinginsulation layer on the insulation layer and the contact plug;patterning the supporting insulation layer to form a trench exposing asurface of the contact plug and at least portion of the insulationlayer; forming an oxidation barrier conductive layer in the trench;forming a lower electrode on the oxidation barrier conductive layer;forming a ferroelectric layer on the supporting insulation layer and thelower electrode layer; forming an upper electrode layer on theferroelectric layer; and patterning the upper electrode layer to form anupper electrode.
 16. The method of claim 15, wherein the forming theoxidation barrier conductive layer comprises: forming an oxidationbarrier conductive material on the supporting insulation layer in thetrench; planarizing the oxidation barrier conductive material such thatthe supporting insulation layer is exposed; and etching back theoxidation barrier conductive material such that a surface of theoxidation barrier conductive material is recessed beneath a surface ofthe supporting insulation layer; forming a lower electrode material onthe supporting insulation layer and in the trench; and planarizing thelower electrode material such that a surface of the lower electrode issubstantially planar with a surface of the supporting insulation layer.17. The method of claim 15 wherein forming the contact plug furthercomprises: forming a layer of the plug conductive material on theinsulating layer and in the contact hole; and etching back the plugconductive material to provide the contact plug such that a surface ofthe contact plug is recessed beneath a surface of the insulation layer,wherein forming the oxidation barrier conductive layer further comprisesforming the oxidation barrier conductive layer such that the oxidationbarrier conductive layer extends into the contact hole on the recessedcontact plug.
 18. The method of claim 15, wherein the forming theoxidation barrier conductive layer comprises: forming an adhesionconductive material on sidewalls of the trench, a surface of theconductive plug and a surface of the supporting insulation layer;forming an oxidation barrier conductive material on the adhesionconductive material; planarizing the oxidation barrier conductivematerial and the adhesion conductive material exposing a surface of thesupporting insulation layer; and etching back the oxidation barrierconductive material and the adhesion conductive material such that asurface of the oxidation barrier conductive material is lower than asurface of the supporting insulation layer to provide the oxidationbarrier conductive layer that is recessed beneath a surface of thesupporting insulation layer, wherein forming the lower electrodecomprises forming the lower electrode on the recessed oxidation barrierconductive layer.
 19. The method of claim 15, wherein the supportinginsulation layer comprises a first supporting insulation layer andwherein the trench is a first trench, the method further comprising:forming a second supporting insulation layer on the oxidation barrierconductive layer and the first supporting insulation layer; patterningthe second supporting insulation layer to form a second trench exposingthe oxidation barrier conductive layer; and forming a lower electrode inthe second trench, wherein forming the ferroelectric layer comprisesforming the ferroelectric layer on the second supporting insulationlayer and the lower electrode.
 20. The method of claim 19 whereinforming the contact plug further comprises: forming a layer of the plugconductive material on the insulating layer and in the contact hole; andetching back the plug conductive material to provide the contact plugsuch that a surface of the contact plug is recessed beneath a surface ofthe insulation layer, wherein forming the oxidation barrier conductivelayer further comprises forming the oxidation barrier conductive layersuch that the oxidation barrier conductive layer extends into thecontact hole on the recessed contact plug.